Silicon allotropy and chemistry at extreme conditions

Kurakevych, Oleksandr O.; Le Godec, Yann; Crichton, Wilson A.; Strobel, Timothy A.; Ribeyron, PJ; Cuevas, A; Weeber, A; Ballif, C; Glunz, S; Poortmans, J; Brendel, R; Aberle, A; Sinton, R; Verlinden, P; Hahn, G
2016
PROCEEDINGS OF THE 6TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2016)
DOI
10.1016/j.egypro.2016.07.084
Silicon is essential for today's electronics because of its ability to show various electronic behaviors that are relevant to numerous fields of cutting-edge applications. It is not a pollutant and, therefore, an ideal candidate to replace the actual materials in photovoltaics, such as compounds based on the arsenic and heavy metals. However, conventional diamond-like Si is an indirect gap semiconductor and cannot absorb solar photons directly. This justifies intensive theoretical and experimental research for the direct-bandgap forms of silicon. Our recent high-pressure studies of the chemical interaction and phase transformations in the Na-Si system, revealed a number of interesting routes to new and known silicon compounds and allotropes. The pressure-temperature range of their formation is suitable for large-volume synthesis and future industrial scaling. The variety of properties observed (e.g. quasi-direct bandgap of open-framework allotrope Si-24) allows us to suggest future applications. (C) 2016 The Authors. Published by Elsevier Ltd.