We provide a fundamental insight into the microscopic mechanisms of the aging processes. Using large-scale molecular dynamics simulations of the prototypical ferroelectric material PbTiO3, we demonstrate that the experimentally observed aging phenomena can be reproduced from intrinsic interactions of defect dipoles related to dopant-vacancy associates, even in the absence of extrinsic effects. We show that variation of the dopant concentration modifies the material's hysteretic response. We identify a universal method to reduce loss and tune the electromechanical properties of inexpensive ceramics for efficient technologies.

The crystal structure of a potassic richterite, K(KCa)Mg5Si8O22(OH)(2) synthesized at 15 GPa and 1400 degrees C, was refined from single-crystal X-ray diffraction data. The unit-cell parameters are: a = 10.1926(5), b = 18.1209(3), c = 5.2736(2) Angstrom, and beta = 105.514(5)degrees. The refinement shows that the M4 site is occupied by K and Ca at a ratio of 1:1 with no site splitting. Entrance of K into the M4 site mainly affects the local environment: the M4-O2, M4-O4, and M4-O6 bond lengths in KK richterite are 3.4, 3.7, and 3.1% longer, respectively, than the corresponding ones in potassium richterite, whereas the M4-O5 distance is 1.2% shorter, giving rise to a more regular M4 polyhedron. Three major structural adjustments allow the M4 site to accommodate large K: a shift of the M4 cation along the two-fold b axis, a modification of the double silicate-chain configurations, and relative displacements of the two back-to-back tetrahedral chains. K at the A site is completely ordered at the Am position. The average of eight shortest A-O distances is 0.044 Angstrom longer than that in potassium richterite, despite the A site being fully filled with K in both structures. The unpolarized Raman spectrum displays only one single band at 3735.5 cm(-1) in the OH-stretching region.

Silicon is the second abundant element, after oxygen, in the earth crust. It is essential for today's electronics because of its ability to show various electronic behaviors that allow covering the numerous fields of cutting-edge applications. Moreover, silicon is not a pollutant and, therefore, is an ideal candidate to replace the actual materials in photovoltaics, like compounds based on the arsenic and heavy metals. It has not replaced them so far because Si is an indirect gap semiconductor and cannot absorb directly the solar photons without thermal agitations of crystal lattice (phonons). This puts it apart from the next-generation applications (light diode, high-performance transistor). That justifies the attempts to create silicon materials with direct gap that can absorb and emit light. Our recent high-pressure studies of the chemical interaction and phase transformations in the Na-Si system, revealed a number of interesting routes to new and known silicon compounds and allotropes. The pressure-temperature range of their formation is suitable for large-volume synthesis and future industrial scaling. The variety of properties observed (e.g. quasi-direct bandgap of open-framework allotrope Si-24) allows us to suggest future industrial applications.

An exploratory high-pressure study of the join CaTiO3-FeTiO3 has uncovered two intermediate perovskites with the compositions CaFe3Ti4O12 and CaFeTi2O6. These perovskites have ordering of Ca2+ and Fe2+ on the A sites. Both of these perovskites are unusual in that the A sites containing Fe2+ are either square planar or tetrahedral, due to the particular tilt geometries of the octahedral frameworks.

Large-volume, phase-pure synthesis of BC8 silicon (Ia (3) over bar, cI16) has enabled bulk measurements of optical, electronic, and thermal properties. Unlike previous reports that conclude BC8-Si is semimetallic, we demonstrate that this phase is a direct band gap semiconductor with a very small energy gap and moderate carrier concentration and mobility at room temperature, based on far-and midinfrared optical spectroscopy, temperature-dependent electrical conductivity, Seebeck and heat capacity measurements. Samples exhibit a plasma wavelength near 11 mu m, indicating potential for infrared plasmonic applications. Thermal conductivity is reduced by 1-2 orders of magnitude depending on temperature as compared with the diamond cubic (DC-Si) phase. The electronic structure and dielectric properties can be reproduced by first-principles calculations with hybrid functionals after adjusting the level of exact Hartree-Fock (HF) exchange mixing. These results clarify existing limited and controversial experimental data sets and ab initio calculations.

We synthesized superhydrous phase B (shy-B) at 22 GPa and two different temperatures: 1200 degrees C ( LT) and 1400 degrees C ( HT) using a multi-anvil apparatus. The samples were investigated by transmission electron microscopy (TEM), single crystal X-ray diffraction, Raman and IR spectroscopy. The IR spectra were collected on polycrystalline thin-films and single crystals using synchrotron radiation, as well as a conventional IR source at ambient conditions and in situ at various pressures ( up to 15 GPa) and temperatures ( down to - 180 degrees C). Our studies show that shy-B exists in two polymorphic forms. As expected from crystal chemistry, the LT polymorph crystallizes in a lower symmetry space group (Pnn2), whereas the HT polymorph assumes a higher symmetry space group (Pnnm). TEM shows that both modi. cations consist of nearly perfect crystals with almost no lattice defects or inclusions of additional phases. IR spectra taken on polycrystalline thin films exhibit just one symmetric OH band and 29 lattice modes for the HT polymorph in contrast to two intense but asymmetric OH stretching bands and at least 48 lattice modes for the LT sample. The IR spectra differ not only in the number of bands, but also in the response of the bands to changes in pressure. The pressure derivatives for the IR bands are higher for the HT polymorph indicating that the high symmetry form is more compressible than the low symmetry form. Polarized, low-temperature single-crystal IR spectra indicate that in the LT-polymorph extensive ordering occurs not only at the Mg sites but also at the hydrogen sites.

Piezoelectrics with negative longitudinal piezoelectric coefficients will contract in the direction of an applied electric field. Such piezoelectrics are thought to be rare, but there is no fundamental physics preventing the realization of negative longitudinal piezoelectric effect in a single-phase material. Using first-principles calculations, we demonstrate that several hexagonal ABC ferroelectrics possess significant negative longitudinal piezoelectric effects. The data mining of a first-principles-based database of piezoelectrics reveals that this effect is a general phenomenon. The origin of this unusual piezoelectric response relies on the strong ionic bonds associated with small effective charges and rigid potential energy surfaces. Moreover, ferroelectrics with negative longitudinal piezoelectric coefficients show anomalous pressure-enhanced ferroelectricity. Our results offer design principles to aid the search for new piezoelectrics for novel electromechanical device applications.

The lattice parameter of magnesiowustite (Mg0.6Fe0.4)O has been measured up to a pressure of 30 GPa and a temperature of 800 K, using an external heated diamond anvil cell and diffraction using X-rays from a synchrotron source. The experiments were conducted under quasi-hydrostatic condition, using neon as a pressure transmitting medium. The experimental P-V-T data were fitted to a thermal-pressure model with the isothermal bulk modulus at room temperature K(T0) = 157 GPa, (partial derivative K(T0/partial derivative P)T = 4, (partial derivative K(T)/partial derivative T)p = -2.7(3) x 10(-2) GPa/K, (partial derivative K(T)/partial derivative T)v = -0.2(2) x 10(-2) GPa/K, and the Anderson-Gruneisen parameter delta(T) = 4.3(5) above the Debye temperature. The data were also fitted to the Mie-Gruneisen thermal equation of state. The least-squares fit yields the Debye temperature theta(D0) = 500(20) K, the Gruneisen parameter gamma-0 = 1.50(5), and the volume dependence q = 1.1 (5). Both thermal-pressure models give consistent P-V-T relations for magnesiowustite to 140 GPa and 4000 K. The P-V-T relations for magnesiowustite were also calculate by using a modified high-temperature Birch-Murnaghan equation of state with a delta(T) of 4.3. The results are consistent with those calculated by using the thermal-pressure model and the Mie-Gruneisen relation to 140 GPa and 3000 K.