Origin of Ferroelectricity in Hafnia from Epitaxially Strain

The discovery of ferroelectricity in thin hafnia films, and bulk yttrium-doped hafnia makes hafnia an attractive material for next-generation electronics due to its robust ferroelectricity in nanoscale samples and its compatibility with silicon. However, its ferroelectricity is not understood. Other ferroelectrics usually lose their ferroelectricity for nanoscopic samples and thin films, and the hafnia ground state is non-polar baddeleyite. In this talk, Dr. Raeliarijaona will present our studies of the microscopic origin of ferroelecricity in hafnia. It will be shown with density functional theory (DFT) that in hafnia epitaxial strain not only stabilizes the ferroelectric phases but also leads to unstable modes and a downhill path in energy from the high-temperature tetragonal structure. We find that under tensile epitaxial strain h the tetragonal phase will distort to one of the two ferroelectric phases: for h> 1.5 %, the s mode is unstable and leads to Pmn2₁, and at h>3.75 %, coupling between this mode and the zone boundary M1 mode leads to Pca2₁.